GE IS200EHPAG1DAB GATE PULSE AMPLIFIER
Cov ntaub ntawv dav dav
| Kev tsim khoom | GE |
| Yam khoom No | IS200EHPAG1DAB |
| Tshooj xov tooj | IS200EHPAG1DAB |
| Series | Mark VI |
| Keeb kwm | Teb Chaws Asmeskas (US) |
| Dimension | 180 * 180 * 30 hli |
| Qhov hnyav | 0,8kg ib |
| Customs Tariff Number | 8539091 ib |
| Hom | Gate Pulse Amplifier |
Cov ntaub ntawv ntxaws
GE IS200EHPAG1DAB Gate Pulse Amplifier
IS200EHPAG1DAB yog ib feem ntawm GE EX21000 series Gate Pulse Amplifiers. IS200EHPAG1DAB pawg thawj coj saib (rau 100mm systems) cuam tshuam kev tswj rau lub Hwj Chim Choj. IS200EHPAG1DAB siv lub rooj vag cov lus txib los ntawm ESEL pawg thawj coj saib hauv tus maub los, thiab tsim lub rooj vag hluav taws xob rau rau SCRs (Silicon ControlledRectifiers). Nws tseem yog qhov interface rau kev tawm tswv yim tam sim no, thiab kev sib txuas lus thiab ntsuas kub.
Ib qho RTD yog siv los saib xyuas tus choj kub thiab tsim lub tswb. Ntxiv sensors actuated los ntawm kiv cua rotation saib cua txias airflow hla tus choj. Ntawm anexciter tswj tsuas yog retrofit, lub exciter tej zaum yuav muaj cov kev cai rau kev lees txais kev tawm tswv yim los ntawm ob lub thermal keyboards mounted ntawm SCR heatsink sib dhos. Ib lub tshuab hluav taws xob qhib rau ntawm lub tswb ntsuas (170 ° F (76 ° C)) thiab lwm qhov ntawm kev mus ncig (190 ° F (87 ° C)). Cov keyboards no raug xa mus rau EGPA pawg thawj coj saib thiab yuav xav tau rov qab mus rau tus choj uas twb muaj lawm. Yog hais tias ob qho tib si qhib, ib tug choj overtemperature tswb isgenerated. Yog tias ob qho tib si qhib, qhov ua txhaum thiab kev mus txawv tebchaws raug tsim.
